1 agilent HMMC-5200 dc?20 ghz hbt series?shunt amplifier data sheet absolute maximum ratings [1] 1. operation in excess of any one of these ratings may result in permanent damage to this device. for normal operation, all combined bias and thermal co nditions should be chosen such that the maximum junction temperature (t j ) is not exceeded. t a =25 c except for t op , t st , and t max . symbol parameters/con ditions min. max. units v cc vdc pad voltage 8.0 volts v pad output pad voltage 3.5 volts p in rf input power, continuous +6 dbm tj junction te mperature +150 c t op operating temperature ? 55 +85 c t st storage temperature ? 65 +165 c t max max. assembly temperature +300 c notes: description the hmmc- 5200 is a dc to 20 ghz, 9.5 db gain, feedback amplifier designed to be used as a cascadable gain block for a variety of applications. the device consists of a modified darlington feedback pair which reduces the sensitivity to process variations and provides 50 ohm input/output port matches. furthermore, this amplifier is fabricated using mwtc's heterojunction bipolar transistor (hbt) process which provides excellent process uniformity, reliability and 1/f noise performance. the device requires a single positive supply voltage and generally operates classCa for good distortion performance. chip size: 410 460 m (16.1 18.1 mils) chip size tolerance: 10 m ( 0.4 mils) chip thickness: 127 15 m (5.0 0.6 mils) pad dimensions: 70 70 m (2.8 2.8 mils), or larger features high bandwidth, f ? 1db : 21 ghz typical moderate gain: 9.5 db 1 db @ 1.5 ghz p ? 1db @ 1.5 ghz: 12.5 dbm typical low l/f noise corner: <20 khz typical single supply operation : >4.75 volts @ 44 ma typ. low power dissipation: 190 mw typ. for chip
2 dc specifications/physical properties [1] (typicals are for v cc = + 5v, r out = 64 ? ) 1. backside ambient operating temperature t a = t op = 25 c unless otherwise noted. symbol parameters/condit ions min. typ. max. units v cc supply voltage 4.75 6.0 volts i c1 stage?one supply current 14.5 17 20 ma i c2 stage?two supply current 262932ma i c1 +i c2 total supply current 46 ma j-bs thermal resistance [1] (junction?to?backside at tj = 150 c) [2] 2. thermal resistance (in c/watt) at a junction temperature t( c) can be estimated using the equation: (t) ? (t j ) [t( c)+273] / [t j ( c)+273] where (t j =150 c) = j-bs . 340 c/watt notes: rf specifications (t a = 25 c, v cc = + 5v, r out = 64 ?, 50 ? system ) symbol parameters/condit ions min. typ. max. units bw operating bandwidth (f ? 3db )20ghz bw operating bandwidth (ff ? 1db )21ghz s 21 small signal gain (@1.5 ghz) 8.5 9.7 10.5 db ? gain small signal gain flatness (dc?5 ghz) 0.2 db small signal gain flatness (dc?20 ghz) 1 db tc temperature coefficient of gain (dc?13 ghz) 0.004 db/ c temperature coefficient of gain (13?20 ghz) 0.02 db/ c (rl in ) min minimum input return loss (dc?15 ghz) ? 15 db minimum input return loss (15?20 ghz) ? 12 db (rl out ) min minimum output return loss ? 15 db isolation reverse isolation ? 15 db pf ? 1db output power at 1db ga in compression: dbm (@ 1.5 ghz) 12.5 (@ 5 ghz) 12.5 (@ 10 ghz) 11.7 (@ 15 ghz) 10.6 (@ 20 ghz) 8.0 p sat saturated output power (@ 1.5 ghz) 13 dbm nf noise figure: db (@ 1 ghz) 6.5 (@ 6 ghz) 6.8 (@ 10 ghz) 7 (@ 15 ghz) 7.5 (@ 16 ghz) 8 (@ 18 ghz) 8.5
3 out in vcc gnd gnd gnd gnd chip is designed to operate with 0.1C0.3 nh of inductance at the rf input and output. this can be accomplished by using 10 mil bond wire lengths on the rf input and output. the bias supply wire can be a 0.7 mil diameter gold wire attached to the v cc bonding pad. gaas mmics are esd sensitive. esd preventive measures must be employed in all aspects of storage, handling, and assembly. mmic esd precautions, handling considerations, die attach and bonding methods are critical factors in successful gaas mmic performance and reliability. agilent application note #54, "gaas mmic esd, die attach and bonding guidelines" provides basic information on these subjects. applications the hmmc- 5200 can be used for a variety of applications requiring moderate amounts of gain and low power dissipation in a 50 ? system. biasing and operation the hmmc- 5200 can be operated from a single positive supply. this supply must be connected to two points on the chip, namely the v cc pad and the output pad. the supply voltage may be directly connected to the v cc pad as long as the voltage is between +4.75 to +7 volts; however, if the supply is higher than +7 volts, a series resistor (r cc ) should be used to reduce the voltage to the v cc pad. see the bonding diagram for the equation used to select r cc . in the case of the output pad, the supply voltage must be connected to the output transmission line through a resistor and an inductor. the required value of the resistor is given by the equation: r out = 35.7v supply - 114.3 ? , where v supply is in volts. if r out is greater than 300 ? , the inductor may be omitted, however, the amplifier's gain may be reduced by ~0.5 db. figure 4 shows a recommended bonding strategy. the chip contains a backside via to provide a low inductance ground path; therefore, the ground pads on the ic should not be bonded. the voltage at the in and out pads of the ic will be approximately 3.2 volts; therefore, dc blocking caps should be used at these ports. assembly techniques it is recommended that the rf input and rf output connections be made using 0.7 mil diameter gold wire. the figure 1. simplified schematic diagram
4 figure 2. typical s 21 and s 12 response figure 3. typical s 11 and s 22 response s?parameters [1] (t a = 25 c, v cc = + 6v, r out = 100 ?, l in/out =0.17nh) 1. s?parameter data obtained from on?wafer device measurement plus simulation of input and output wire bond inductance. freq. (ghz) s 11 s 12 s 21 s 22 db mag ang db mag ang db mag ang db mag ang 0.0 ? 30.4 0.030 28.9 ? 14.1 0.197 0.0 9.5 3.013 179.9 ? 28.4 0.038 ? 1.5 1.0 ? 29.5 0.033 24.9 ? 14.1 0.195 ? 2.0 9.5 2.999 171.5 ? 29.3 0.034 ? 7.049 2.0 ? 28.7 0.037 27.3 ? 14.2 0.194 ? 4.1 9.5 2.992 163.2 ? 30.8 0.029 ? 15.233 3.0 ? 27.2 0.043 33.5 ? -14.2 0.195 ? 6.2 9.5 3.009 155.0 ? 31.5 0.026 ? 23.9 4.0 ? 25.6 0.052 32.4 ? 14.1 0.195 ? 8.3 9.6 3.036 146.7 ? 33.6 0.022 ? 42.7 5.0 ? 24.8 0.058 33.3 ? 14.1 0.195 ? 10.4 9.7 3.062 138.2 ? 35.8 0.016 ? 72.8 6.0 ? 24.0 0.063 31.1 ? 14.1 0.196 ? 12.6 9.8 3.097 129.6 ? 36.6 0.015 ? 109.3 7.0 ? 23.1 0.070 27.1 ? 14.1 0.197 ? 14.7 9.9 3.135 120.9 ? 34.1 0.020 ? 143.3 8.0 ? 22.6 0.074 21.9 ? 14.0 0.197 ? 16.9 10.0 3.181 112.0 ? 30.1 0.031 ? 166.4 9.0 ? 22.5 0.074 15.7 ? 14.0 0.198 ? 19.1 10.1 3.225 102.9 ? 26.9 0.045 176.1 10.0 ? 22.3 0.076 8.55 ? 14.0 0.199 ? 21.4 10.2 3.266 93.5 ? 24.4 0.060 164.4 11.0 ? 22.4 0.076 ? 0.36 ? 13.9 0.200 ? 23.6 10.3 3.298 83.9 ? 22.5 0.075 154.2 12.0 ? 22.5 0.075 ? 13.5 ? 13.9 0.201 ? 25.8 10.4 3.322 74.2 ? 20.9 0.090 147.9 13.0 ? 22.8 0.072 ? 27.9 ? 13.8 0.203 ? 28.2 10.4 3.338 64.4 ? 19.5 0.105 141.1 14.0 ? 23.2 0.069 ? 47.1 ? 13.8 0.204 ? 30.6 10.4 3.332 54.2 ? 18.3 0.121 134.2 15.0 ? 22.9 0.071 ? -69.7 ? 13.7 0.205 ? 33.1 10.3 3.306 44.0 ? 17.5 0.133 128.4 16.0 ? 22.5 0.075 ? 93.4 ? 13.6 0.207 ? 35.7 10.2 3.253 33.7 ? 16.7 0.145 122.0 17.0 ? 20.8 0.091 ? 115.1 ? 13.6 0.208 ? 37.9 10.0 3.181 23.5 ? 16.0 0.158 118.6 18.0 ? 19.2 0.109 ? 134.4 ? 13.5 0.210 ? 40.8 9.7 3.085 13.4 ? 15.5 0.167 112.3 19.0 ? 17.4 0.134 ? 149.6 ? 13.4 0.212 ? 43.8 9.4 2.975 3.5 ? 15.3 0.172 109.7 20.0 ? 15.8 0.161 ? 161.7 ? 13.4 0.213 ? 46.8 9.0 2.844 ? 6.0 ? 15.2 0.172 106.0 21.0 ? 14.4 0.190 ? 172.3 ? 13.4 0.213 ? 49.8 8.6 2.706 ? 15.4 ? 14.9 0.179 105.1 22.0 ? 13.1 0.220 178.7 ? 13.4 0.213 ? 52.9 8.1 2.560 ? 24.4 ? 14.9 0.178 104.0 23.0 ? 12.0 0.250 170.7 ? 13.4 0.212 ? 55.6 7.6 2.416 ? 33.0 ? 14.7 0.183 103.0 24.0 ? 11.0 0.281 163.3 ? 13.4 0.212 ? 58.3 7.1 2.272 ? 41.3 ? 14.5 0.187 104.9 25.0 ? 10.1 0.313 157.0 ? 13.5 0.211 ? 61.2 6.5 2.134 ? 49.2 ? 14.2 0.193 105.7 26.0 ? 9.29 0.343 150.8 ? 13.4 0.212 ? 63.9 6.0 1.997 ? 56.9 ? 13.8 0.203 106.8 notes: s 11 , (db) s 22 , (db) ? 40 0 ? 10 ? 20 ? 30 ? 50 frequency (ghz) 0.10 13 26 s 22 s 11 ? 40 0 ? 10 ? 20 ? 30 ? 50 s 21 , (db) s 12 , (db) 4 12 10 8 6 2 frequency (ghz) 0.10 13 26 s 12 s 21 t a =25 c, v cc =+6v, ? 20 0 ? 5 ? 10 ? 15 ? 25 r out =100 ? , l in/out =0.17nh [1] t a =25 c, v cc =+6v, r out =100 ? , l in/out =0.17nh [1]
5 figure 4. assembly diagram figure 5. bonding pad positions note: blocking cap required on 0 70 340 460 90 240 390 0 410 note: all dimensions in microns. 175 rf output rf input if 4.75v v supply 7v r cc = 0 5v supply r out = r cc * * [(v supply -3.2)*(1/0.028)] ? r cc = [(v supply -6.5)*(1/0.01725)] ? if v supply > 7v r out l choke ? c block c block note: for optimum performance, the input and output bond wire inductances should each be 0.1 f ? 0.3 nh. (bond wire has about 20 ph/mil of inductance). ? l choke is optional if r out is greater than 300 ? , however, gain will be reduced by about 0.5 db. * input and output.
this data sheet contains a variety of typical and guaranteed performance data. the information supplied should not be interpreted as a complete list of circuit sp ecifications. in this data sheet the term typical refers to the 50th percentile performance. for additional information contact your local agilent technologies? sales representative. www.agilent.com/semiconductors for product information and a complete list of distributors, please go to our web site. for technical assistance call: americas/canada: +1 (800) 235-0312 or (408) 654-8675 europe: +49 (0) 6441 92460 china: 10800 650 0017 hong kong: (+65) 6271 2451 india, australia, new zealand: (+65) 6271 2394 japan: (+81 3) 3335-8152(domestic/international), or 0120-61-1280(domestic only) korea: (+65) 6271 2194 malaysia, singapore: (+65) 6271 2054 taiwan: (+65) 6271 2654 data subject to change. copyright ? 2002 agilent technologies, inc. october 10, 2003 5988-3202en
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